Thermal stability and rehybridization of carbon bonding in tetrahedral amorphous carbon
نویسندگان
چکیده
منابع مشابه
Thermal Stability and Rehybridization of Carbon Bonding in Tetrahedral Amorphous Carbon
We preform a quantitative investigation of the energetics of thermally induced sp3 → sp2 conversion of carboncarbon bonds in tetrahedral amorphous carbon (ta-C) films by using near edge x-ray absorption fine structure (NEXAFS) and Raman spectroscopy. We investigate the evolution of the bonding configuration in ta-C thin films subjected to high temperature annealing in flowing Argon gas using a ...
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Wear in self-mated tetrahedral amorphous carbon (ta-C) films is studied by molecular dynamics and nearedge X-ray absorption fine structure spectroscopy. Both theory and experiment demonstrate the formation of a soft amorphous carbon (a-C) layer with increased sp content, which grows faster than an a-C tribolayer found on selfmated diamond sliding under similar conditions. The faster sp ! sp tra...
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We report ultraviolet (uv) Raman scattering studies of hydrogen-free, diamondlike amorphous carbon thin films with a wide range of tetrahedral bonding. The uv Raman spectra are shown to provide direct evidence for the presence of sp-bonded C atoms in these materials. The experimental results are found to be in excellent agreement with theoretical predictions and contribute to an improved unders...
متن کاملMAGNETISATION AND ELECTRON SPIN RESONANCE STUDIES OF TETRAHEDRAL AMORPHOUS CARBON
The magnetisation and electron spin resonance (ESR) spectrum of two specimens of tetrahedral amorphous carbon (ta-C), deposited from a filtered cathodic arc, were measured over a wide temperature range. The magnetisation was found to consist of superparamagnetic, paramagnetic and diamagnetic contributions. The superparamagnetic contribution resembled that recently found in carbon prepared from ...
متن کاملStress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon
A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon ~ta-C! on Si has been carried out. Complete stress relief occurs at 600–700 °C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing i...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2010
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3284087